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  Structural investigation of nanocrystalline graphene grown on (6√3×6√3) R30°-reconstructed SiC surfaces by molecular beam epitaxy

Schumann, T., Dubslaff, M., Oliveira, M. H., Hanke, M., Fromm, F., Seyller, T., et al. (2013). Structural investigation of nanocrystalline graphene grown on (6√3×6√3) R30°-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics, 15(12): 123034. doi:10.1088/1367-2630/15/12/123034.

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Schumann et al_submitted.pdf (beliebiger Volltext), 1012KB
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2013
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Institute of Physics Pub.

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 Urheber:
Schumann, T1, Autor
Dubslaff, M1, Autor
Oliveira , M H 1, Autor
Hanke, M1, Autor
Fromm, F2, Autor
Seyller, T2, Autor
Nemec, Lydia3, Autor           
Blum, Volker3, Autor           
Scheffler, Matthias3, Autor           
Lopes, J Marcelo J1, Autor
Riechert, H1, Autor
Affiliations:
1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany, ou_persistent22              
2Technische Universität Chemnitz, Institut für Physik, Raichenhainer Str. 70, 09126 Chemnitz, Germany, ou_persistent22              
3Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Schlagwörter: Graphene, nanocrystalline graphene, silicon carbide, buffer layer, molecular beam epitaxy, grazing incidence diffraction, density functional theory
 Zusammenfassung: Growth of nanocrystalline graphene films on (6√3×6√3) R30°- reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is investigated by Raman spectroscopy, increases with growth time. X-ray photoelectron spectroscopy proves that the SiC surface reconstruction persists throughout the growth process and that the synthesized films consist of sp2-bonded carbon. Interestingly, grazing incidence X-ray diffraction measurements show that the graphene domains possess one single in-plane orientation, are aligned to the substrate, and offer a noticeably contracted lattice parameter of 2.446 Å. We correlate this contraction with theoretically calculated reference values (all-electron density functional calculations based on the van der Waals corrected PBE functional) for the lattice parameter contraction induced in ideal, free-standing graphene sheets by: substrate-induced buckling, the edges of limited-size flakes, and typical point defects (monovacancies, divacancies, Stone-Wales defects).

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Sprache(n): eng - English
 Datum: 2013-11-222013-08-292013-11-262013-12-20
 Publikationsstatus: Online veröffentlicht
 Seiten: 16
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1088/1367-2630/15/12/123034
 Art des Abschluß: -

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Titel: New Journal of Physics
  Andere : New J. Phys.
Genre der Quelle: Zeitschrift
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Affiliations:
Ort, Verlag, Ausgabe: Bristol, UK : Institute of Physics Pub.
Seiten: - Band / Heft: 15 (12) Artikelnummer: 123034 Start- / Endseite: - Identifikator: ISSN: 1367-2630
CoNE: https://pure.mpg.de/cone/journals/resource/954926913666