Oligothiophene-based monolayer field-effect transistors prepared by 
Langmuir-Blodgett technique

Sizov, A. S.; Agina, E. V.; Gholamrezaie, Fatemeh; Bruevich, V. V.; Borshchev, O. V.; Paraschuk, D. Y.; de Leeuw, Dago M.; Ponomarenko, S. A.

doi:10.1063/1.4816839

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Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique

Sizov, A. S., Agina, E. V., Gholamrezaie, F., Bruevich, V. V., Borshchev, O. V., Paraschuk, D. Y., et al. (2013). Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique. Applied Physics Letters, 103(4): 043310. doi:10.1063/1.4816839.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-4AEF-5 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-4AF0-0

Genre: Journal Article

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Creators:
Sizov, A. S., Author
Agina, E. V., Author
Gholamrezaie, Fatemeh¹, Author
Bruevich, V. V., Author
Borshchev, O. V., Author
Paraschuk, D. Y., Author
de Leeuw, Dago M.¹, Author
Ponomarenko, S. A., Author

Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284

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Language(s): eng - English

Dates: Date issued: 2013

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.4816839

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Title: Applied Physics Letters

Source Genre: Journal

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Publ. Info: Melville, NY : American Institute of Physics

Pages: - Volume / Issue: 103 (4) Sequence Number: 043310 Start / End Page: - Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223