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  TEM for strain-engineered devices: Dark-field inline holography for nanoscale strain mapping

Özdöl, V. B., van Aken, P. A., & Koch, C. T. (2012). TEM for strain-engineered devices: Dark-field inline holography for nanoscale strain mapping. G.I.T. Imaging and Microscopy, 3, 18-20.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-000E-BB01-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-000E-BB03-7
Genre: Journal Article

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 Creators:
Özdöl, V. B.1, Author           
van Aken, P. A.1, Author           
Koch, C. T.1, 2, Author           
Affiliations:
1Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497669              
2Institute for Experimental Physics, Ulm University, Ulm, Germany, ou_persistent22              

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Free keywords: Stuttgart Center for Electron Microscopy
 Abstract: -

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Language(s): eng - English
 Dates: 2012
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: No review
 Identifiers: -
 Degree: -

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Title: G.I.T. Imaging and Microscopy
Source Genre: Journal
 Creator(s):
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Publ. Info: Weinheim : GIT Publishers; John Wiley
Pages: - Volume / Issue: 3 Sequence Number: - Start / End Page: 18 - 20 Identifier: -