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  Step-shaped bismuth nanowires with metal–semiconductor junction characteristics

Tian, Y. T., Meng, G. W., Wang, G. Z., Phillipp, F., Sun, S. H., & Zhang, L. D. (2006). Step-shaped bismuth nanowires with metal–semiconductor junction characteristics. Nanotechnology, 17, 1041-1045.

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 Creators:
Tian, Y. T.1, Author
Meng, G. W.1, Author
Wang, G. Z.1, Author
Phillipp, F.2, Author           
Sun, S. H.1, Author
Zhang, L. D.1, Author
Affiliations:
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, People’s Republic of China, ou_persistent22              
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497669              

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Free keywords: MPI für Metallforschung; Emeriti and Others; Stuttgart Center for Electron Microscopy (StEM);
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Language(s): eng - English
 Dates: 2006
 Publication Status: Issued
 Pages: -
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 Rev. Type: Peer
 Identifiers: eDoc: 318177
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Title: Nanotechnology
Source Genre: Journal
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Pages: - Volume / Issue: 17 Sequence Number: - Start / End Page: 1041 - 1045 Identifier: -