Origins of stress development during metal-induced crystallization and layer 
exchange: Annealing amorphous Ge/crystalline Al bilayers

Wang, Z. M.; Wang, J. Y.; Jeurgens, L. P. H.; Phillipp, F.; Mittemeijer, E. J.

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Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers

Wang, Z. M., Wang, J. Y., Jeurgens, L. P. H., Phillipp, F., & Mittemeijer, E. J. (2008). Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers. Acta Materialia, 56, 5047-5057.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-413C-C Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-413D-A

Genre: Journal Article

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Creators:
Wang, Z. M.¹, Author
Wang, J. Y.¹, Author
Jeurgens, L. P. H.¹, Author
Phillipp, F.², Author
Mittemeijer, E. J.^{1, 3}, Author

Affiliations:
1Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497644
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497669
3Universität Stuttgart, Institut für Materialwissenschaft, ou_persistent22

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Free keywords: MPI für Metallforschung; Stuttgart Center for Electron Microscopy (StEM); Abt. Mittemeijer;

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Language(s): eng - English

Dates: Date issued: 2008

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 379421

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Title: Acta Materialia

Source Genre: Journal

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Pages: - Volume / Issue: 56 Sequence Number: - Start / End Page: 5047 - 5057 Identifier: -