Stress release drives growth transition of quaterrrylene thin films on SiO 
surfaces

Hayakawa, R.; Zhang, X.N.; Dosch, H.; Hiroshiba, N.; Chikyow, T.; Wakayama, Y.

doi:10.1021/jp809556p

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Stress release drives growth transition of quaterrrylene thin films on SiO surfaces

Hayakawa, R., Zhang, X., Dosch, H., Hiroshiba, N., Chikyow, T., & Wakayama, Y. (2009). Stress release drives growth transition of quaterrrylene thin films on SiO surfaces. Journal of Physical Chemistry C, 113(6), 2197-2199. doi:10.1021/jp809556p.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3D38-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3D39-F

Genre: Journal Article

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Creators:
Hayakawa, R.¹, Author
Zhang, X.N.², Author
Dosch, H.^{2, 3}, Author
Hiroshiba, N.¹, Author
Chikyow, T.¹, Author
Wakayama, Y.¹, Author

Affiliations:
1Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan;, ou_persistent22
2Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
3Universität Stuttgart, Institut für Theoretische und Angewandte Physik, ou_persistent22

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Free keywords: MPI für Metallforschung; Abt. Dosch/Rühle;

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Language(s): eng - English

Dates: Date issued: 2009-01-20

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 413808
DOI: 10.1021/jp809556p

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Title: Journal of Physical Chemistry C

Source Genre: Journal

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Pages: - Volume / Issue: 113 (6) Sequence Number: - Start / End Page: 2197 - 2199 Identifier: -