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  A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes

Özdöl, V. B., Koch, C. T., & van Aken, P. A. (2010). A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes. Journal of Applied Physics, 108(5): 056103. doi:10.1063/1.3476285.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3C39-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3C3A-2
Genre: Journal Article
Alternative Title : JAP

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 Creators:
Özdöl, V. B.1, Author           
Koch, C. T.1, 2, Author           
van Aken, P. A.1, Author           
Affiliations:
1Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              

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Free keywords: MPI für Intelligente Systeme; Stuttgart Center for Electron Microscopy (StEM);
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Language(s): eng - English
 Dates: 2010
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 508131
DOI: 10.1063/1.3476285
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Title: Journal of Applied Physics
  Alternative Title : JAP
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 108 (5) Sequence Number: 056103 Start / End Page: - Identifier: -