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  Strain mapping of 45 nm MOSFET by dark-field inline electron holography

Özdöl, V. B., Koch, C. T., & van Aken, P. A. (2010). Strain mapping of 45 nm MOSFET by dark-field inline electron holography. Microscopy and Microanalysis, 16(Suppl. 2), 592-593.

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Genre: Conference Paper
Alternative Title : Microsc. Microanal.

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 Creators:
Özdöl, V. B.1, Author           
Koch, C. T.1, 2, Author           
van Aken, P. A.1, Author           
Affiliations:
1Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              

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Free keywords: MPI für Metallforschung; Stuttgart Center for Electron Microscopy (StEM);
 Abstract: -

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Language(s): eng - English
 Dates: 2010
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Internal
 Identifiers: eDoc: 493457
DOI: 10.1017/S1431927610057090
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Title: Microscopy and Microanalysis 2010
Place of Event: Portland, Oregon, USA
Start-/End Date: 2010-08-01 - 2010-08-05

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Title: Microscopy and Microanalysis
  Alternative Title : Microsc. Microanal.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 16 (Suppl. 2) Sequence Number: - Start / End Page: 592 - 593 Identifier: -