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  Characterization of ytterbium silicide formed in ultra high vacuum

Łaszcz, A., Ratajczak, J., Czerwinski, A., Kątcki, J., Srot, V., Phillipp, F., et al. (2010). Characterization of ytterbium silicide formed in ultra high vacuum. Journal of Physics: Conference Series, 209: 012056.

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 Creators:
Łaszcz, A.1, Author
Ratajczak, J.1, Author
Czerwinski, A.1, Author
Kątcki, J.1, Author
Srot, V.2, Author           
Phillipp, F.2, Author           
van Aken, P. A.2, Author           
Yarekha, D.1, Author
Reckinger, N.1, Author
Larrieu, G.1, Author
Dubois, E.1, Author
Affiliations:
1Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland;IEMN/ISEN, UMRS CNRS 8520, Avenue Poincare, Cite Scientifique, BP 69, 59652 Villeneuve d’Ascq Cedex, France;Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium., ou_persistent22              
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              

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Free keywords: MPI für Metallforschung; Stuttgart Center for Electron Microscopy (StEM);
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Language(s): eng - English
 Dates: 2010
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 466661
DOI: 10.1088/1742-6596/209/1/012056
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Title: 16th International Conference on Microscopy of Semiconducting Materials
Place of Event: Oxford, United Kingdom
Start-/End Date: 2009-03-17 - 2009-03-20

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Title: Journal of Physics: Conference Series
Source Genre: Journal
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Pages: - Volume / Issue: 209 Sequence Number: 012056 Start / End Page: - Identifier: -