An efficient, simple, and precise way to map strain with nanometer resolution 
in semiconductor devices

Koch, C. T.; Özdöl, V. B.; van Aken, P. A.

doi:10.1063/1.3337090

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An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

Koch, C. T., Özdöl, V. B., & van Aken, P. A. (2010). An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices. Applied Physics Letters, 96: 091901. doi:10.1063/1.3337090.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3B6C-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3B6D-7

Genre: Journal Article

Alternative Title : APL

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Creators:
Koch, C. T.^{1, 2}, Author
Özdöl, V. B.², Author
van Aken, P. A.², Author

Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669

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Free keywords: MPI für Metallforschung; Stuttgart Center for Electron Microscopy (StEM);

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Language(s): eng - English

Dates: Date issued: 2010

Publication Status: Issued

Pages: 3 pages

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Rev. Type: Peer

Identifiers: eDoc: 460305
DOI: 10.1063/1.3337090

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Title: Applied Physics Letters

Alternative Title : APL

Source Genre: Journal

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Pages: - Volume / Issue: 96 Sequence Number: 091901 Start / End Page: - Identifier: -