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  The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina

Sturm, S., Gülgün, M. A., Richter, G., Morales, F. M., Cannon, R. M., & Rühle, M. (2010). The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina. International Journal of Materials Research, 101, 95-101.

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 Creators:
Sturm, S., Author           
Gülgün, M. A., Author           
Richter, G.1, Author           
Morales, F. M., Author           
Cannon, R. M., Author           
Rühle, M.2, Author           
Affiliations:
1Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640              
2Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497645              

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Free keywords: MPI für Metallforschung; Emeriti and Others; Abt. Arzt; ZWE Dünnschichtlabor;
 Abstract: -

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Language(s): eng - English
 Dates: 2010-01-01
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 463862
DOI: 10.3139/146.110258
 Degree: -

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Title: 7th International Workshop on Interfaces - New Materials via Interfacial Control
Place of Event: Santiago de Compostela, Spain
Start-/End Date: 2008-06-22 - 2008-06-26

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Title: International Journal of Materials Research
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 101 Sequence Number: - Start / End Page: 95 - 101 Identifier: -