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  Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

Sembian, A. M., Banhart, F., Konuma, M., Weber, J., Moorthy Babuc, S., & Ramasamyc, P. (2000). Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates. Thin Solid Films, 372, 1-5.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3A01-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3A02-0
Genre: Journal Article

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 Creators:
Sembian, A. M.1, Author
Banhart, F.2, Author           
Konuma, M.1, Author
Weber, J.1, Author
Moorthy Babuc, S.3, Author
Ramasamyc, P.3, Author
Affiliations:
1Max Planck Society, ou_persistent13              
2Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497650              
3Crystal Growth Centre, Anna Uni®ersity, Chennai 600 025, India, ou_persistent22              

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Free keywords: MPI für Metallforschung; MPI für Festkörperforschung; Abt. Dosch;
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Language(s): eng - English
 Dates: 2000
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 245073
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Title: Thin Solid Films
Source Genre: Journal
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Pages: - Volume / Issue: 372 Sequence Number: - Start / End Page: 1 - 5 Identifier: -