Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

Schmidt, O. G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F.

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Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., & Ernst, F. (2000). Effect of overgrowth temperature on the photoluminescence of Ge/Si islands. Applied Physics Letters, 77, 2509-2511.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-39FD-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-39FE-4

Genre: Journal Article

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Creators:
Schmidt, O. G.¹, Author
Denker, U.¹, Author
Eberl, K.¹, Author
Kienzle, O.², Author
Ernst, F.², Author

Affiliations:
1Max Planck Society, ou_persistent13
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657

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Free keywords: MPI für Metallforschung; MPI für Festkörperforschung; Ehemalige Abt. Rühle;

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Language(s): eng - English

Dates: Date issued: 2000

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 245065

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 77 Sequence Number: - Start / End Page: 2509 - 2511 Identifier: -