Reduced critical thickness and photoluminescence line splitting in multiple 
layers of self-assembled Ge/Si islands

Schmidt, O. G.; Eberl, K.; Kienzle, O.; Ernst, F.; Christiansen, S.; Strunk, H. P.

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Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands

Schmidt, O. G., Eberl, K., Kienzle, O., Ernst, F., Christiansen, S., & Strunk, H. P. (2000). Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands. Materials Science and Engineering B, 74, 248-252.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37F2-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37F3-8

Genre: Journal Article

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Creators:
Schmidt, O. G., Author
Eberl, K., Author
Kienzle, O.¹, Author
Ernst, F.¹, Author
Christiansen, S., Author
Strunk, H. P., Author

Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657

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Free keywords: MPI für Metallforschung; Abt. Rühle;

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Language(s): eng - English

Dates: Date issued: 2000

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 198720

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Title: Materials Science and Engineering B

Source Genre: Journal

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Pages: - Volume / Issue: 74 Sequence Number: - Start / End Page: 248 - 252 Identifier: -