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  Preparation and optical properties of Ge and C-induced Ge dots on Si

Eberl, K., Schmidt, O. G., Kienzle, O., & Ernst, F. (2000). Preparation and optical properties of Ge and C-induced Ge dots on Si. In S. Moss (Ed.), Semiconductor Quantum Dots (pp. 355-362). Warrendale, Pa.: MRS.

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 Creators:
Eberl, K., Author
Schmidt, O. G., Author
Kienzle, O.1, Author           
Ernst, F.1, Author           
Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              

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Free keywords: MPI für Metallforschung; Ehemalige Abt. Rühle;
 Abstract: -

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Language(s): eng - English
 Dates: 2000
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 43785
 Degree: -

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Title: Semiconductor Quantum Dots. Symposium
Place of Event: San Francisco, Calif., U.S.A.
Start-/End Date: 1999-04-05 - 1999-04-08

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Title: Semiconductor Quantum Dots
Source Genre: Proceedings
 Creator(s):
Moss, S.C., Editor
Affiliations:
-
Publ. Info: Warrendale, Pa. : MRS
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 355 - 362 Identifier: -

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Title: Materials Research Society Symposia proceedings
Source Genre: Series
 Creator(s):
Materials Research Society, Editor  
Affiliations:
-
Publ. Info: -
Pages: - Volume / Issue: 571 Sequence Number: - Start / End Page: - Identifier: -