Interface of directly bonded GaAs and InP

Jin-Phillipp, N. Y.; Sigle, W.; Black, A.; Babic, D.; Bowers, J. E.; Hu, E. L.; Rühle, M.

Local TagsRelease HistoryDetailsSummary

Interface of directly bonded GaAs and InP

Jin-Phillipp, N. Y., Sigle, W., Black, A., Babic, D., Bowers, J. E., Hu, E. L., et al. (2001). Interface of directly bonded GaAs and InP. Journal of Applied Physics, 89(2), 1017-1024.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3597-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3598-8

Genre: Journal Article

Alternative Title : J. Appl. Phys.

Files

show Files

Locators

show

Creators

show

hide

Creators:
Jin-Phillipp, N. Y.^{1, 2, 3}, Author
Sigle, W.^{1, 3}, Author
Black, A.⁴, Author
Babic, D.⁴, Author
Bowers, J. E.⁴, Author
Hu, E. L.⁴, Author
Rühle, M.¹, Author

Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657
2Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
3Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669
4Univ Calif Santa Barbara, QUEST, Santa Barbara, CA 93106 USA; Agilent Labs, Palo Alto, CA 94304 USA, ou_persistent22

Content

show

hide

Free keywords: MPI für Metallforschung; Abt. Rühle;

Abstract: -

Details

show

hide

Language(s): eng - English

Dates: Date issued: 2001-01-15

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: Peer

Identifiers: eDoc: 21807
ISI: 000166144400030

Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show

hide

Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

Creator(s):

Affiliations:

Publ. Info: -

Pages: - Volume / Issue: 89 (2) Sequence Number: - Start / End Page: 1017 - 1024 Identifier: ISSN: 0021-8979