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  Dislocation structure of a defective near-surface skin layer in V2H

Trenkler, J., Barabash, R., Dosch, H., & Moss, S. C. (2001). Dislocation structure of a defective near-surface skin layer in V2H. Physical Review B, 64(21): 214101, pp. 214101-1-214101-6.

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Genre: Journal Article
Alternative Title : Phys. Rev. B

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 Creators:
Trenkler, J.1, Author           
Barabash, R.2, Author
Dosch, H.1, 3, Author           
Moss, S. C.2, Author
Affiliations:
1Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645              
2Univ Houston, Dept Phys, Houston, TX 77204 USA; Univ Houston, Dept Phys, Houston, TX 77204 USA; Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA;, ou_persistent22              
3Universität Stuttgart, Institut für Theoretische und Angewandte Physik, ou_persistent22              

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Free keywords: MPI für Metallforschung; Abt. Dosch;
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Language(s): eng - English
 Dates: 2001-12-01
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 20412
ISI: 000172557700024
 Degree: -

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Title: Physical Review B
  Alternative Title : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 64 (21) Sequence Number: 214101 Start / End Page: 214101-1 - 214101-6 Identifier: ISSN: 0163-1829