Polarity selection in GaN films grown by laser induced reactive epitaxy

Zhou, H.; Henn, G.; Gross, M.; Schröder, H.; Phillipp, F.

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Polarity selection in GaN films grown by laser induced reactive epitaxy

Zhou, H., Henn, G., Gross, M., Schröder, H., & Phillipp, F. (2001). Polarity selection in GaN films grown by laser induced reactive epitaxy. Physica Status Solidi A-Applied Research, 188(3), 1065-1070.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-339B-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-339D-0

Genre: Journal Article

Alternative Title : Phys. Status Solidi A-Appl. Res.

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Creators:
Zhou, H.¹, Author
Henn, G.¹, Author
Gross, M.¹, Author
Schröder, H., Author
Phillipp, F.², Author

Affiliations:
1Natl Inst Mat Sci, Sengen 1-2-1, Tsukuba, Ibaraki 3050047,; Japan; Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan; DLR, Inst Tech Phys, D-70569 Stuttgart, Germany;, ou_persistent22
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497657

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Free keywords: MPI für Metallforschung; Abt. Rühle; ZWE Hochspannungs-Mikroskopie;

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Language(s): eng - English

Dates: Date issued: 2001-12-04

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 20193
ISI: 000173006900020

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Title: Physica Status Solidi A-Applied Research

Alternative Title : Phys. Status Solidi A-Appl. Res.

Source Genre: Journal

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Pages: - Volume / Issue: 188 (3) Sequence Number: - Start / End Page: 1065 - 1070 Identifier: ISSN: 0031-8965