Laterally ordered Ge/Si islands: a new concept for faster field effect 
transistors

Schmidt, O. G.; Denker, U.; Dashiell, M.; Jin-Phillipp, N. Y.; Eberl, K.; Schreiner, R.; Gräbeldinger, H.; Schweizer, H.; Christiansen, S.; Ernst, F.

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Laterally ordered Ge/Si islands: a new concept for faster field effect transistors

Schmidt, O. G., Denker, U., Dashiell, M., Jin-Phillipp, N. Y., Eberl, K., Schreiner, R., et al. (2002). Laterally ordered Ge/Si islands: a new concept for faster field effect transistors. Materials Science and Engineering B, 89, 101-105.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-32B0-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-32B1-8

Genre: Journal Article

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Creators:
Schmidt, O. G.¹, Author
Denker, U.¹, Author
Dashiell, M.², Author
Jin-Phillipp, N. Y.^{3, 4, 5}, Author
Eberl, K.², Author
Schreiner, R.², Author
Gräbeldinger, H.², Author
Schweizer, H.², Author
Christiansen, S.², Author
Ernst, F.³, Author

Affiliations:
1Max Planck Society, ou_persistent13
2Max-Planck-Institut für Festkörperforschung, Stuttgart, ou_persistent22
3Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657
4Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
5Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669

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Free keywords: MPI für Intelligente Systeme; Ehem. Abt. Rühle; 64-ru_2002

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Dates: Date issued: 2002

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 11073

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Title: Materials Science and Engineering B

Source Genre: Journal

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Pages: - Volume / Issue: 89 Sequence Number: - Start / End Page: 101 - 105 Identifier: -