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  Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC

Hasenkopf, A., Scholz, F., & Phillipp, F. (2002). Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC.

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 Creators:
Hasenkopf, A.1, Author           
Scholz, F., Author
Phillipp, F.1, Author           
Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497657              

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Free keywords: MPI für Metallforschung; Abt. Rühle; ZWE Hochspannungs-Mikroskopie;
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 Dates: 2002
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 10883
 Degree: -

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Title: Microscopy and Microanalysis 2002
Place of Event: Québec City [Quebec, Canada]
Start-/End Date: 2002-08-05 - 2002-08-08

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Title: Proceedings Microscopy and Microanalysis 2002
Source Genre: Issue
 Creator(s):
Voelkl, E., Editor
Piston, D., Editor
Gauvin, R., Editor
Lockley, A.J., Editor
Bailey, G.W., Editor
McKernan, S., Editor
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-
Publ. Info: -
Pages: CD-ROM Volume / Issue: - Sequence Number: - Start / End Page: 1202 - 1203 Identifier: -

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Title: Microscopy and Microanalysis
Source Genre: Journal
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Pages: CD-ROM Volume / Issue: 8 (Supplement 2) Sequence Number: - Start / End Page: - Identifier: -