Low temperature epitaxial growth of germanium islands in active regions of Si 
interband tunneling diods

Daschiel, M.; Müller, C.; Jin-Phillipp, N. Y.; Denker, U.; Schmidt, O. G.; Eberl, K.

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Low temperature epitaxial growth of germanium islands in active regions of Si interband tunneling diods

Daschiel, M., Müller, C., Jin-Phillipp, N. Y., Denker, U., Schmidt, O. G., & Eberl, K. (2002). Low temperature epitaxial growth of germanium islands in active regions of Si interband tunneling diods. Materials Science and Engineering B, 89, 106-110.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3296-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3297-4

Genre: Journal Article

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Creators:
Daschiel, M.¹, Author
Müller, C.², Author
Jin-Phillipp, N. Y.^{3, 4, 5}, Author
Denker, U.⁶, Author
Schmidt, O. G.⁶, Author
Eberl, K.¹, Author

Affiliations:
1Max-Planck-Institut für Festkörperforschung, Stuttgart, ou_persistent22
2Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497654
3Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657
4Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
5Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669
6Max Planck Society, ou_persistent13

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Free keywords: MPI für Metallforschung; Abt. Rühle; 38-ru_2002

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Language(s): eng - English

Dates: Date issued: 2002

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 10819

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Title: Materials Science and Engineering B

Source Genre: Journal

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Pages: - Volume / Issue: 89 Sequence Number: - Start / End Page: 106 - 110 Identifier: -