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  Czochralski growth of bismuth germanium silicon oxide (BGSO) single crystal and its characterization

Vaithianathan, V., Kumaragurubaran, S., Senguttuvan, N., Santhanaraghavan, P., Ishii, M., Sinha, P. K., et al. (2002). Czochralski growth of bismuth germanium silicon oxide (BGSO) single crystal and its characterization. Journal of Crystal Growth, 235(1-4), 212-216.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3225-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3226-4
Genre: Journal Article
Alternative Title : J. Cryst. Growth

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 Creators:
Vaithianathan, V.1, Author
Kumaragurubaran, S.2, Author           
Senguttuvan, N.1, Author
Santhanaraghavan, P.1, Author
Ishii, M.1, Author
Sinha, P. K.1, Author
Ramasamy, P.1, Author
Affiliations:
1Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India; Shonan Inst Technol, Dept Mat Sci, Fujisawa, Kanagawa, Japan; Anna Univ, Dept Sci & Humanities, Madras 600025, Tamil Nadu, India; Babha Atom Res Ctr, Centralized Waste Management Facil, Kalpakkam 603102, Tamil Nadu, India, ou_persistent22              
2Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645              

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Free keywords: MPI für Metallforschung; Abt. Dosch; characterization; Czochralski method; single crystal growth
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Language(s): eng - English
 Dates: 2002-02
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 6949
ISI: 000173742600034
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Title: Journal of Crystal Growth
  Alternative Title : J. Cryst. Growth
Source Genre: Journal
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Pages: - Volume / Issue: 235 (1-4) Sequence Number: - Start / End Page: 212 - 216 Identifier: ISSN: 0022-0248