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  Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons

Zaoui, A., & Hassan, F. E. (2002). Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons. Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, 82(7), 791-800.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3110-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3111-9
Genre: Journal Article
Alternative Title : Philos. Mag. B-Phys. Condens. Matter Stat. Mech. Electron. Opt. Magn. Prop.

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 Creators:
Zaoui, A.1, Author           
Hassan, F. E., Author
Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              

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Free keywords: MPI für Metallforschung; Abt. Rühle;
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Language(s): eng - English
 Dates: 2002-05-10
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 6861
ISI: 000175210700004
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Title: Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties
  Alternative Title : Philos. Mag. B-Phys. Condens. Matter Stat. Mech. Electron. Opt. Magn. Prop.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 82 (7) Sequence Number: - Start / End Page: 791 - 800 Identifier: ISSN: 0141-8637