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  Quantitative AES depth profiling of a Ge/Si multilayer structure

Hofmann, S., & Kesler, V. (2002). Quantitative AES depth profiling of a Ge/Si multilayer structure. Surface and Interface Analysis, 33(6), 461-471.

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Genre: Journal Article
Alternative Title : Surf. Interface Anal.

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 Creators:
Hofmann, S.1, Author           
Kesler, V.2, Author
Affiliations:
1Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497644              
2Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia, ou_persistent22              

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Free keywords: MPI für Metallforschung; Abt. Mittemeijer; depth profiling; Ge/Si interface; multilayer; MRI model; sputtering
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Language(s): eng - English
 Dates: 2002-06
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 6791
ISI: 000176481600001
 Degree: -

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Title: Surface and Interface Analysis
  Alternative Title : Surf. Interface Anal.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 33 (6) Sequence Number: - Start / End Page: 461 - 471 Identifier: ISSN: 0142-2421