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  Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3

Hasenkopf, A., Phillipp, F., Moutchnik, G., Ivanov, A., & Scholz, F. (2003). Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3. In A. Cullis, & P. Midgley (Eds.), Microscopy of Semiconducting Materials 2003 (pp. 355-358). London: Institute of Physics.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2F1F-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2F21-3
Genre: Conference Paper

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 Creators:
Hasenkopf, A.1, Author           
Phillipp, F.1, Author           
Moutchnik, G.2, Author
Ivanov, A.2, Author
Scholz, F.2, Author
Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              
24. Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany, ou_persistent22              

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Free keywords: MPI für Intelligente Systeme; Ehem. Abt. Rühle;
 Abstract: -

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Language(s): eng - English
 Dates: 2003
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 169732
 Degree: -

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Title: Microscopy of Semiconducting Materials 2003
Place of Event: Cambridge, UK
Start-/End Date: 2003-03-31 - 2003-04-03

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Title: Microscopy of Semiconducting Materials 2003
Source Genre: Proceedings
 Creator(s):
Cullis, A., Editor
Midgley, P.A., Editor
Affiliations:
-
Publ. Info: London : Institute of Physics
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 355 - 358 Identifier: ISBN: 0 7503 0979 2

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Title: Institute of Physics Conference Series
Source Genre: Series
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Publ. Info: -
Pages: - Volume / Issue: 180 Sequence Number: - Start / End Page: - Identifier: -