Growth and microstructural characterization of GaN films grown by laser induced 
reactive epitaxy

Zhou, H.; Rupp, B.; Phillipp, F.; Henn, B.; Gross, M.; Rühm, A.; Schröder, H.

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Growth and microstructural characterization of GaN films grown by laser induced reactive epitaxy

Zhou, H., Rupp, B., Phillipp, F., Henn, B., Gross, M., Rühm, A., et al. (2003). Growth and microstructural characterization of GaN films grown by laser induced reactive epitaxy. Journal of Applied Physics, 93, 1933-1940.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2D9B-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2D9D-C

Genre: Journal Article

Alternative Title : J. Appl. Phys.

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Creators:
Zhou, H.¹, Author
Rupp, B.², Author
Phillipp, F.³, Author
Henn, B.², Author
Gross, M.², Author
Rühm, A.⁴, Author
Schröder, H.⁴, Author

Affiliations:
1Max Planck Society, ou_persistent13
2DLR, Institut für Technische Physik, Stuttgart, Germany, ou_persistent22
3Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497657
4Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645

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Free keywords: MPI für Metallforschung; Abt. Rühle; ZWE Hochspannungs-Mikroskopie;

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Language(s): eng - English

Dates: Date issued: 2003

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 49869

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Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 93 Sequence Number: - Start / End Page: 1933 - 1940 Identifier: -