Atomic structure of the interface between silicon (111) and amorphous germanium

Borgardt, N. I.; Plikat, B.; Schröter, W.; Seibt, M.; Wagner, T.

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Atomic structure of the interface between silicon (111) and amorphous germanium

Borgardt, N. I., Plikat, B., Schröter, W., Seibt, M., & Wagner, T. (2004). Atomic structure of the interface between silicon (111) and amorphous germanium. Physical Review B, 70(19): 195307.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2894-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2895-6

Genre: Journal Article

Alternative Title : Phys. Rev. B

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Creators:
Borgardt, N. I.¹, Author
Plikat, B.¹, Author
Schröter, W.¹, Author
Seibt, M.¹, Author
Wagner, T.², Author

Affiliations:
1Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany.; Sonderforschungsbereich 602, D-37077 Gottingen, Germany.; Moscow Inst Elect Technol, Moscow 103498, Russia., ou_persistent22
2Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640

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Free keywords: MPI für Metallforschung; Abt. Arzt; ZWE Dünnschichtlabor;

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Language(s): eng - English

Dates: Date issued: 2004-11

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 211362
ISI: 000225477800085

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Title: Physical Review B

Alternative Title : Phys. Rev. B

Source Genre: Journal

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Pages: - Volume / Issue: 70 (19) Sequence Number: 195307 Start / End Page: - Identifier: ISSN: 1098-0121