Influence of domain boundaries on polarity of GaN grown on sapphire

Zhou, H.; Phillipp, F.; Schröder, H.; Bell, J. M.

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Influence of domain boundaries on polarity of GaN grown on sapphire

Zhou, H., Phillipp, F., Schröder, H., & Bell, J. M. (2005). Influence of domain boundaries on polarity of GaN grown on sapphire. Applied Surface Science, 252, 483-487.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2829-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-282B-3

Genre: Journal Article

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Creators:
Zhou, H.¹, Author
Phillipp, F.², Author
Schröder, H.³, Author
Bell, J. M.¹, Author

Affiliations:
1Centre for Built Environment and Engineering Research, Queensland University of Technology, Brisbane, Qld 4001, Australia;KLEO Halbleitertechnik GmbH and Co. KG, 88069 Tettnang, Germany, ou_persistent22
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497657
3Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645

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Free keywords: MPI für Metallforschung; Ehemalige Abt. Rühle; ZWE Hochspannungs-Mikroskopie;

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Language(s): eng - English

Dates: Date issued: 2005

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 241341

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Title: Applied Surface Science

Source Genre: Journal

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Pages: - Volume / Issue: 252 Sequence Number: - Start / End Page: 483 - 487 Identifier: -