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  Interface state mapping in a Schottky barrier of the organic semiconductor terrylene

Stallinga, P., Gomes, H. L., Murgia, M., & Müllen, K. (2002). Interface state mapping in a Schottky barrier of the organic semiconductor terrylene. Organic Electronics, 3(1), 43-51.

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 Creators:
Stallinga, P., Author
Gomes, H. L., Author
Murgia, M., Author
Müllen, Klaus1, Author           
Affiliations:
1MPI for Polymer Research, Max Planck Society, ou_1309545              

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Free keywords: organic semiconductors; interface states; Schottky barrier
 Abstract: In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum and the vacuum sublimed organic semiconductor terrylene. The density map of these interface states was extracted from the, admittance spectroscopy data. They revealed an interface state density of 2 x 10(12). cm(-2)eV(-1) close to the valence band which decreases slightly towards midgap. Additional do measurements show that the semiconductor bulk activation energy is 0.33 eV which may correspond to an acceptor level. (C) 2002 Elsevier Science B.V. All rights reserved.

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Language(s): eng - English
 Dates: 2002-03
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: No review
 Identifiers: eDoc: 28413
ISI: 000180828200006
Other: P-02-105
 Degree: -

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Title: Organic Electronics
  Alternative Title : Org. Electron.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 3 (1) Sequence Number: - Start / End Page: 43 - 51 Identifier: ISSN: 1566-1199