Activation Energies for Diffusion of Defects in Silicon: The Role of the 
Exchange-Correlation Functional

Estreicher, Stefan K.; Backlund, Daniel J.; Carbogno, Christian; Scheffler, Matthias

doi:DOI: 10.1002/anie.201100733

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Activation Energies for Diffusion of Defects in Silicon: The Role of the Exchange-Correlation Functional

Estreicher, S. K., Backlund, D. J., Carbogno, C., & Scheffler, M. (2011). Activation Energies for Diffusion of Defects in Silicon: The Role of the Exchange-Correlation Functional. Angewandte Chemie International Edition, 50(43), 10221-10225. doi:DOI: 10.1002/anie.201100733.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-000F-3F8D-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-000F-3F8E-F

Genre: Journal Article

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Creators:
Estreicher, Stefan K.¹, Author
Backlund, Daniel J.², Author
Carbogno, Christian³, Author
Scheffler, Matthias³, Author

Affiliations:
1hysics Department, Texas Tech University, Lubbock, TX 79409-1051 (USA), ou_persistent22
2Texas Tech University Health Sciences Center IT–Room 1C384,, Lubbock, TX 79409 (USA), ou_persistent22
3Theory, Fritz Haber Institute, Max Planck Society, Faradayweg 4–6, 14195 Berlin-Dahlem (Germany), ou_634547

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Language(s): eng - English

Dates: Date issued: 2011-10-17

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: DOI: 10.1002/anie.201100733

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Title: Angewandte Chemie International Edition

Source Genre: Journal

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Pages: - Volume / Issue: 50 (43) Sequence Number: - Start / End Page: 10221 - 10225 Identifier: -