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キーワード:
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要旨:
The intermetallic semiconductor FeGa 3 acquires itinerant ferromagnetism upon electron doping by a partial replacement of Ga with Ge. We studied the electron spin resonance (ESR) of high-quality single crystals of FeGa 3− x Ge x for x from 0 up to 0.162 where ferromagnetic order is observed. For x = 0 we observed a well-defined ESR signal, indicating the presence of pre-formed magnetic moments in the semiconducting phase. Upon Ge doping the occurrence of itinerant magnetism clearly affects the ESR properties below ≈40 K, whereas at higher temperatures an ESR signal as seen in FeGa 3 prevails independent on the Ge content. The present results show that the ESR of FeGa 3− x Ge x is an appropriate and direct tool to investigate the evolution of 3d-based itinerant magnetism.
