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  Learning physical descriptors for materials science by compressed sensing

Ghiringhelli, L. M., Vybiral, J., Ahmetcik, E., Ouyang, R., Levchenko, S. V., Draxl, C., et al. (2017). Learning physical descriptors for materials science by compressed sensing. New Journal of Physics, 19(2): 023017. doi:10.1088/1367-2630/aa57bf.

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Ghiringhelli_2017_New_J._Phys._19_023017.pdf (Publisher version), 2MB
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Ghiringhelli_2017_New_J._Phys._19_023017.pdf
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 Creators:
Ghiringhelli, Luca M.1, Author           
Vybiral, Jan2, Author
Ahmetcik, Emre1, Author           
Ouyang, Runhai1, Author           
Levchenko, Sergey V.1, Author           
Draxl, Claudia1, 3, Author
Scheffler, Matthias1, 4, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
2Charles University, Department of Mathematical Analysis, Prague, Czech Republic, ou_persistent22              
3Humboldt-Universität zu Berlin, Institut für Physik and IRIS Adlershof, Berlin, Germany, ou_persistent22              
4Department of Chemistry and Biochemistry and Materials Department, University of California-Santa Barbara, Santa Barbara, CA 93106-5050, United States of America, ou_persistent22              

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 Abstract: The availability of big data in materials science offers new routes for analyzing materials properties and functions and achieving scientific understanding. Finding structure in these data that is not directly visible by standard tools and exploitation of the scientific information requires new and dedicated methodology based on approaches from statistical learning, compressed sensing, and other recent methods from applied mathematics, computer science, statistics, signal processing, and information science. In this paper, we explain and demonstrate a compressed-sensing based methodology for feature selection, specifically for discovering physical descriptors, i.e., physical parameters that describe the material and its properties of interest, and associated equations that explicitly and quantitatively describe those relevant properties. As showcase application and proof of concept, we describe how to build a physical model for the quantitative prediction of the crystal structure of binary compound semiconductors.

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 Dates: 2017-01-042016-12-032017-01-092017-02-07
 Publication Status: Published online
 Pages: 24
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1088/1367-2630/aa57bf
 Degree: -

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Project name : NoMaD - The Novel Materials Discovery Laboratory
Grant ID : 676580
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)

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Title: New Journal of Physics
  Abbreviation : New J. Phys.
Source Genre: Journal
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Publ. Info: Bristol : IOP Publishing
Pages: 24 Volume / Issue: 19 (2) Sequence Number: 023017 Start / End Page: - Identifier: ISSN: 1367-2630
CoNE: https://pure.mpg.de/cone/journals/resource/954926913666