High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes 
and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Kaelblein, Daniel; Ryu, Hyeyeon; Ante, Frederik; Fenk, Bernhard; Hahn, Kersten; Kern, Klaus; Klauk, Hagen

doi:10.1021/nn501484e

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High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO<Sub>x</Sub> Gate Dielectric

Kaelblein, D., Ryu, H., Ante, F., Fenk, B., Hahn, K., Kern, K., et al. (2014). High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO_x Gate Dielectric. ACS Nano, 8, 6840-6848. doi:10.1021/nn501484e.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-3BD3-5 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-B55F-2

Genre: Journal Article

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Creators:
Kaelblein, Daniel¹, Author
Ryu, Hyeyeon¹, Author
Ante, Frederik¹, Author
Fenk, Bernhard¹, Author
Hahn, Kersten², Author
Kern, Klaus¹, Author
Klauk, Hagen¹, Author

Affiliations:
1Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, ou_persistent22
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669

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Free keywords: StEM

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Language(s): eng - English

Dates: Published Online: 2014-06-18Date issued: 2014

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: 10.1021/nn501484e

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Title: ACS Nano

Source Genre: Journal

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Publ. Info: Washington, DC : American Chemical Society

Pages: - Volume / Issue: 8 Sequence Number: - Start / End Page: 6840 - 6848 Identifier: Other: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851