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キーワード:
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要旨:
The Mn3Ga Heusler compound and related alloys are the most promising
materials for the realization of spin-transfer-torque magnetoresistive
memories. Mn-Ga films exhibits perpendicular magnetic anisotropy and
high spin polarization and can be used to improve the performance of
MgO-based magneto tunneling junctions. The interface between Mn-Ga and
MgO films were chemically characterized by hard x-ray photoelectron
spectroscopy. The experiment indicated the formation of Ga-O bonds at
the interface and evidenced changes in the local environment of Mn atoms
in the proximity of the MgO film. We show that the deposition of few
monoatomic layers of Mg on top of Mn-Ga film, before the MgO deposition,
strongly suppresses the oxidation of gallium. (C) 2014 AIP Publishing
LLC.
