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要旨:
A number of Bi2Sr2-xLaxCuOy crystals with different doping levels in the
phase diagram have been grown and characterized by x-ray-diffraction
measurements. The anisotropic resistivity was measured using a
generalization of the Montgomery method and was found to change in a
systematic way. Our analysis indicates that for all the samples the
in-plane transport is on the metallic side of the Ioffe-Regel criterion,
but the out-of-plane transport is deeply on the insulating side of the
Mott limit. The temperature dependence of c-axis resistivity rho(c)(T)
can be well understood from the incoherent hopping model proposed by
Levin and co-workers. The evolution of rho(c)(T) with reduction in
doping level is related to the reducing of both the impurity- and
boson-assisted hopping processes.
