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Abstract:
We present a rational design scheme intended to provide stable high spin
polarization at the interfaces of the magnetoresistive junctions by
fulfilling the criteria of structural and chemical compatibilities at
the interface. This can be realized by joining the semiconducting and
half-metallic Heusler materials with similar structures. The present
first-principles calculations verify that the interface remains
half-metallic if the nearest interface layers effectively form a stable
Heusler material with the properties intermediately between the
surrounding bulk parts. This leads to a simple rule for selecting the
proper combinations.
