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  Doped semiconductors as half-metallic materials: Experiments and first-principles calculations of CoTi1-xMxSb (M = Sc, V, Cr, Mn, Fe)

Balke, B., Fecher, G. H., Gloskovskii, A., Barth, J., Kroth, K., Felser, C., Robert, R., & Weidenkaff, A. (2008). Doped semiconductors as half-metallic materials: Experiments and first-principles calculations of CoTi1-xMxSb (M = Sc, V, Cr, Mn, Fe). Physical Review B, 77(4):, pp. 1-11. doi:10.1103/PhysRevB.77.045209.

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資料種別: 学術論文

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 作成者:
Balke, Benjamin1, 著者
Fecher, Gerhard H., 著者
Gloskovskii, Andrei1, 著者
Barth, Joachim1, 著者
Kroth, Kristian1, 著者
Felser, Claudia2, 著者           
Robert, Rosa1, 著者
Weidenkaff, Anke1, 著者
所属:
1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 要旨: This work reports experiments and first-principles calculations on the substitutional semiconducting C1(b) compound CoTi1-xMxSb. Diluted magnetic semiconductors have been prepared by substituting titanium in the semiconducting compound CoTiSb by other 3d transition elements M. Self-consistent calculations of the electronic structure predict some of the materials to be half-metallic ferromagnets. The structural, electronic, electric, and magnetic properties of the pure and substituted materials have been investigated. It is found from the experiments that substitution of up to 10% Ti by Fe, Mn, Cr, and V does not affect the crystalline structure and the lattice mismatch is less than 0.5% in the substituted compounds. The electric properties can be tuned from semiconducting to metallic by using different dopants. The M=Cr-doped compound exhibits a metal to semiconductor transition. Photoemission spectroscopy and conductivity measurements agree well with the calculated electronic structure. The measured Curie temperature of the Fe-substituted alloy is far above room temperature (>700 K). This fact and the very low lattice mismatch between the substituted and the pure compound make this material a serious candidate for future electronic applications, in particular for magnetoelectronics and spintronics.

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 日付: 2008-01-01
 出版の状態: 出版
 ページ: -
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 識別子(DOI, ISBNなど): ISI: 000252863100066
DOI: 10.1103/PhysRevB.77.045209
 学位: -

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出版物名: Physical Review B
  その他 : Phys. Rev. B
種別: 学術雑誌
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出版社, 出版地: Woodbury, NY : American Physical Society
ページ: - 巻号: 77 (4) 通巻号: 045209 開始・終了ページ: 1 - 11 識別子(ISBN, ISSN, DOIなど): ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008