Density of bulk trap states in organic semiconductor crystals: Discrete levels 
induced by oxygen in rubrene

Krellner, C; Hass, S.; Goldmann, C.; Pernstich, K. P.; Gundlach, D. J.; Batlogg, B.

doi:10.1103/PhysRevB.75.245115

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Density of bulk trap states in organic semiconductor crystals: Discrete levels induced by oxygen in rubrene

Krellner, C., Hass, S., Goldmann, C., Pernstich, K. P., Gundlach, D. J., & Batlogg, B. (2007). Density of bulk trap states in organic semiconductor crystals: Discrete levels induced by oxygen in rubrene. Physical Review B, 75: 245115, pp. 245115-1-245115-5. doi:10.1103/PhysRevB.75.245115.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-2A55-C Version Permalink: https://hdl.handle.net/21.11116/0000-0000-849F-8

Genre: Journal Article

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Krellner, C¹, Author
Hass, S., Author
Goldmann, C., Author
Pernstich, K. P., Author
Gundlach, D. J., Author
Batlogg, B., Author

Affiliations:
1Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462

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Language(s): eng - English

Dates: Date issued: 2007

Publication Status: Issued

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Identifiers: eDoc: 339106
DOI: 10.1103/PhysRevB.75.245115

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 75 Sequence Number: 245115 Start / End Page: 245115-1 - 245115-5 Identifier: -