Fabrication and characterisation of AlGaN photodetectors for applications in 
the EUV/XUV ranges

Pau, J. L.; Hainout, O.; Rivera, C.; Muñoz, E.; Calleja, E.; Hochedez, J. F.; Omnès, F.; Schühle, U.; Lemaire, P.

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Fabrication and characterisation of AlGaN photodetectors for applications in the EUV/XUV ranges

Pau, J. L., Hainout, O., Rivera, C., Muñoz, E., Calleja, E., Hochedez, J. F., et al. (2004). Fabrication and characterisation of AlGaN photodetectors for applications in the EUV/XUV ranges. In Proceedings Conferencia de Dispositivos Electrónicos.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-F075-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-F076-4

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Pau, J. L., Author
Hainout, O., Author
Rivera, C., Author
Muñoz, E., Author
Calleja, E., Author
Hochedez, J. F., Author
Omnès, F., Author
Schühle, U.^{1, 2}, Author
Lemaire, P., Author

Affiliations:
1MPI for Aeronomy, Max Planck Institute for Solar System Research, Max Planck Society, ou_1832291
2Department Sun and Heliosphere, Max Planck Institute for Solar System Research, Max Planck Society, ou_1832289

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MPIS_GROUPS: Sun and Heliosphere

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Dates: Date issued: 2004

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Identifiers: BibTex Citekey: Pau:2004-110

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Title: Proceedings Conferencia de Dispositivos Electrónicos

Source Genre: Proceedings

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