The role of internal structure in the anomalous switching dynamics of 
metal-oxide/polymer resistive random access memories

Rocha, P. R. F.; Kiazadeh, A.; de Leeuw, Dago M.; Meskers, S. C. J.; Verbakel, F.; Taylor, D. M.; Gomes, H. L.

doi:10.1063/1.4799093

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The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Rocha, P. R. F., Kiazadeh, A., de Leeuw, D. M., Meskers, S. C. J., Verbakel, F., Taylor, D. M., et al. (2013). The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories. Journal of Applied Physics, 113(13): 134504. doi:10.1063/1.4799093.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-000E-FC2B-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-45A3-6

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Creators:
Rocha, P. R. F., Author
Kiazadeh, A., Author
de Leeuw, Dago M.¹, Author
Meskers, S. C. J., Author
Verbakel, F., Author
Taylor, D. M., Author
Gomes, H. L., Author

Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284

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Language(s): eng - English

Dates: Date issued: 2013

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.4799093

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Title: Journal of Applied Physics

Source Genre: Journal

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Publ. Info: New York, NY : American Institute of Physics

Pages: - Volume / Issue: 113 (13) Sequence Number: 134504 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880