Growth of epitaxial Pr2O3 layers on Si(111)

Jeutter, N. M; Hennemeyer, M.; Stark, R.; Stierle, A.; Moritz, W.

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Growth of epitaxial Pr₂O₃ layers on Si(111)

Jeutter, N. M., Hennemeyer, M., Stark, R., Stierle, A., & Moritz, W. (2006). Growth of epitaxial Pr₂O₃ layers on Si(111). Materials Science in Semiconductor Processing, 9, 1079-1083.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4823-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4824-4

Genre: Journal Article

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Creators:
Jeutter, N. M¹, Author
Hennemeyer, M.¹, Author
Stark, R.¹, Author
Stierle, A.², Author
Moritz, W.¹, Author

Affiliations:
1Department of Earth and Environmental Sciences, Universität München, 80333 München, Germany, ou_persistent22
2Former Central Scientific Facility ANKA Synchroton Beamline, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497651

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Free keywords: MPI für Metallforschung; Abt. Dosch;

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Language(s): eng - English

Dates: Date issued: 2006

Publication Status: Issued

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Identifiers: eDoc: 298746

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Title: Materials Science in Semiconductor Processing

Source Genre: Journal

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Pages: - Volume / Issue: 9 Sequence Number: - Start / End Page: 1079 - 1083 Identifier: -