Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for 
hetero-CMOS transistors

Wohl, G.; Kasper, E.; Hackbarth, T.; Kibbel, H.; Klose, M.; Ernst, F.

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Fully relaxed Si_0.7Ge_0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors

Wohl, G., Kasper, E., Hackbarth, T., Kibbel, H., Klose, M., & Ernst, F. (2001). Fully relaxed Si_0.7Ge_0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors. Journal of Materials Science-Materials in Electronics, 12(4-6), 235-240.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-34E4-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-34E5-6

Genre: Journal Article

Alternative Title : J. Mater. Sci.-Mater. Electron.

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Creators:
Wohl, G.¹, Author
Kasper, E.¹, Author
Hackbarth, T.¹, Author
Kibbel, H.¹, Author
Klose, M.¹, Author
Ernst, F.², Author

Affiliations:
1Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-; 70569 Stuttgart, Germany; Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany; DaimlerChrysler AG, Res & Technol, D-89081 Ulm, Germany; German Aerosp Ctr, Inst Tech Phys, D-70569 Stuttgart, Germany;, ou_persistent22
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657

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Free keywords: MPI für Intelligente Systeme; Ehem. Abt. Rühle;

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Language(s): eng - English

Dates: Date issued: 2001-06

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 122982
ISI: 000169734400009

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Title: Journal of Materials Science-Materials in Electronics

Alternative Title : J. Mater. Sci.-Mater. Electron.

Source Genre: Journal

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Pages: - Volume / Issue: 12 (4-6) Sequence Number: - Start / End Page: 235 - 240 Identifier: ISSN: 0957-4522