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要旨:
Ta-oxide thin films are shown to catalyse carbon nanotube growth by chemical
vapour deposition. A low film thickness, the nature of the support material (best
results with SiO2) and an atmospheric process gas pressure are of key importance for
successful nanotube nucleation. Strong material interactions, such as silicide
formation, inhibit nanotube growth. In-situ X-ray photoelectron spectroscopy
indicates that no catalyst reduction to a metal or carbide occurs during nanotube
growth and that the catalytically active phase is the Ta-oxide phase. Such a reductionfree
oxide catalyst can be advantageous for integration of nanotubes into electronics.
