Vacancies in GaN bulk and nanowires: effect of self-interaction corrections

Carter, Damien J; Fuchs, Martin; Stampfl, Catherine

doi:10.1088/0953-8984/24/25/255801

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Vacancies in GaN bulk and nanowires: effect of self-interaction corrections

Carter, D. J., Fuchs, M., & Stampfl, C. (2012). Vacancies in GaN bulk and nanowires: effect of self-interaction corrections. Journal of Physics: Condensed Matter, 24(25): 255801. doi:10.1088/0953-8984/24/25/255801.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-000F-C65A-5 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0013-A918-B

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Urheber:
Carter, Damien J^{1, 2}, Autor
Fuchs, Martin³, Autor
Stampfl, Catherine⁴, Autor

Affiliations:
1Nanochemistry Research Institute, Curtin University,, GPO Box U1987, Perth, WA 6845, Australia, ou_persistent22
2iVEC, 21 Dick Perry Avenue, Kensington, WA 6151, Australia, ou_persistent22
3Theory, Fritz Haber Institute, Max Planck Society, ou_634547
4School of Physics, The University of Sydney, Sydney, NSW 2006, Australia, ou_persistent22